Abstract

In this article the photothermal and void parameters of a semiconductor rotational medium are investigated when there is a fixed thermal relaxation time. We obtain the displacement, temperature, stress components, and carrier density concentration in a thermoelastic solid. Considering the normal mode technique under the effectiveness of the rotation, photothermal, and voids on the obtained components were graphically drawn. A comparison was made between the results obtained, taking into account the presence or ignorance of rotation, photothermal, and voids. The outcomes point out a strong impact of the voids, rotation, photothermal, and the thermal relaxation on the phenomenon and agree with the physical results. The results agree with the previous results obtained by the others when the rotation and voids vanish.

摘要

在本文中，研究了当存在固定热弛豫时间时半导体旋转介质的光热和空隙参数。我们获得了热弹性固体中的位移、温度、应力分量和载流子密度浓度。考虑到正常模式技术在旋转、光热和所获得组件上的空洞的有效性下进行了图形绘制。考虑到旋转、光热和空隙的存在与否，对获得的结果进行了比较。结果指出了空隙、旋转、光热和热弛豫对现象的强烈影响，并与物理结果一致。当旋转和空隙消失时，结果与其他人获得的先前结果一致。