During high‐electron‐mobility transistor elaboration process, a thermal treatment of In_0.2Al_0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In_0.2Al_0.8N/GaN heterostructures, annealed at 850°C under O₂ partial pressure, present a specific in‐depth organization. Angle‐resolved X‐ray photoelectron spectroscopy is a powerful tool to precisely determine the spatial localization and relative position of the different interfaces, from InAlN until buried GaN layer. The proposed in‐depth model of the stack evidences (1) an Al‐rich surface oxide with embedded N₂ molecules, (2) an interlayer of InAlN_<1 governed by nitrogen lattice defects, (3) a stable In_0.2Al_0.8N matrix, and finally (4) the GaN buffer layer underneath.

中文翻译：

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使用角度分辨X射线光电子能谱对退火后的InAlN / GaN HEMT异质结构进行深入分析

在高电子迁移率晶体管加工过程中，为了提高电性能，对In _0.2 Al _0.8 N（InAlN）势垒层进行了热处理。我们先前表明，在O ₂分压下于850°C退火的In _0.2 Al _0.8 N / GaN异质结构呈现出特定的深度组织。角度分辨X射线光电子能谱是一种功能强大的工具，可以精确地确定从InAlN到埋藏的GaN层，不同界面的空间定位和相对位置。拟议的堆栈深度模型证明（1）具有嵌入N ₂分子的富Al表面氧化物，（2）InAlN _<1的中间层受氮晶格缺陷控制，（3）稳定的In _0.2 Al _0.8 N基体，最后（4）下方的GaN缓冲层。