Abstract Nowadays, the fabrication of cheaper, thermodynamically stable and durable transparent semiconducting oxide-based thin films are on high demand to enhance the properties of optoelectronic, sensing and energy harvesting devices. It is well known that Sn-doped In2O3 (ITO) thin films are difficult to grow by direct current sputtering. However, in this work cost-effective Sn-doped In2O3 films are deposited onto borosilicate glass substrates using a direct current sputtering of metallic In/Sn-target. The film thickness was controlled by the deposition time. A post-deposition annealing of the films in a vacuum atmosphere was performed in order to control the structural, optical and electrical properties. The phase formation, crystallite grain sizes (D) and lattice parameters have been assessed from the X-ray diffraction data analysis. Cross-section Scanning electron microscope image analyses were performed in order to estimate the growth rate of thin films. A band gap energy closing was observed associated with relaxation process of the unit cell suggested by the monotonic reduction of the lattice constant. Besides, a low sheet resistance (44 Ohm/square) was obtained, which is comparable to the commercially available ITO films. Furthermore, a inverse-square dependence between the sheet resistance and the grain size was determined (Rsq ∼ 1/D2). The last was used to estimate the carrier concentration of the thicker film ∼ 1020 c m − 3 , which is in agreement with the value obtained from the Hall measurement.

中文翻译：

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生长和真空后退火对掺锡 In2O3 薄膜结构、电学和光学性能的影响

摘要 如今，人们迫切需要制造更便宜、热力学稳定且耐用的透明半导体氧化物基薄膜，以提高光电、传感和能量收集设备的性能。众所周知，Sn掺杂的In2O3（ITO）薄膜很难通过直流溅射生长。然而，在这项工作中，使用金属 In/Sn 靶的直流溅射将具有成本效益的 Sn 掺杂 In2O3 薄膜沉积到硼硅玻璃基板上。膜厚由沉积时间控制。在真空气氛中对薄膜进行沉积后退火，以控制结构、光学和电学性能。相形成、微晶晶粒尺寸 (D) 和晶格参数已通过 X 射线衍射数据分析进行评估。进行横截面扫描电子显微镜图像分析以估计薄膜的生长速率。观察到带隙能量闭合与晶格常数单调减少所暗示的晶胞弛豫过程相关。此外，获得了低薄层电阻（44 欧姆/平方），可与市售的 ITO 薄膜相媲美。此外，还确定了薄层电阻和晶粒尺寸之间的平方反比关系（Rsq ∼ 1/D2）。最后一个用于估计较厚薄膜的载流子浓度 ~ 1020 cm - 3 ，这与霍尔测量获得的值一致。观察到带隙能量闭合与晶格常数单调减少所暗示的晶胞弛豫过程相关。此外，获得了低薄层电阻（44 欧姆/平方），可与市售的 ITO 薄膜相媲美。此外，还确定了薄层电阻和晶粒尺寸之间的平方反比关系（Rsq ∼ 1/D2）。最后一个用于估计较厚薄膜的载流子浓度 ~ 1020 cm - 3 ，这与霍尔测量获得的值一致。观察到带隙能量闭合与晶格常数单调减少所暗示的晶胞弛豫过程相关。此外，获得了低薄层电阻（44 欧姆/平方），可与市售的 ITO 薄膜相媲美。此外，还确定了薄层电阻和晶粒尺寸之间的平方反比关系（Rsq ∼ 1/D2）。最后一个用于估计较厚薄膜的载流子浓度 ~ 1020 cm - 3 ，这与霍尔测量获得的值一致。确定了薄层电阻和晶粒尺寸之间的平方反比关系（Rsq ∼ 1/D2）。最后一个用于估计较厚薄膜的载流子浓度 ~ 1020 cm - 3 ，这与霍尔测量获得的值一致。确定了薄层电阻和晶粒尺寸之间的平方反比关系（Rsq ∼ 1/D2）。最后一个用于估计较厚薄膜的载流子浓度 ~ 1020 cm - 3 ，这与霍尔测量获得的值一致。