Abstract The wafer-scale, near-infrared, and nanoporous (NP)-GaN distributed Bragg reflectors (DBRs) were fabricated by using an electrochemical anodization method for the first time. The peak reflectivity of the DBR mirrors on the sapphire substrates is ~95% in the range of 550 nm–1750 nm with different stop-band widths. To explore its potential applications, a lead-free all-inorganic perovskite film with a PL emission in the near-infrared region was grown on a DBR mirror. Compared to the reference perovskite film, the photoluminescence intensity of the perovskite film on the DBR substrate presents more than 4-fold enhancement, which is in agreement with the calculated value. The performance enhancement should be contributable to light-coupling enhancement of emission light. The near-infrared NP-GaN DBRs pave the way for developing a range of perovskite devices for broadband and large-area applications.

中文翻译：

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晶圆级纳米多孔GaN近红外分布式布拉格反射器的制备与应用

摘要 首次采用电化学阳极氧化方法制备了晶圆级、近红外、纳米多孔（NP）-GaN分布式布拉格反射器（DBR）。蓝宝石衬底上 DBR 反射镜的峰值反射率在 550 nm-1750 nm 范围内具有不同的阻带宽度，约为 95%。为了探索其潜在应用，在 DBR 镜上生长了一种在近红外区域具有 PL 发射的无铅全无机钙钛矿薄膜。与参考钙钛矿薄膜相比，DBR 基板上钙钛矿薄膜的光致发光强度呈现 4 倍以上的增强，与计算值一致。性能增强应该有助于发射光的光耦合增强。