Abstract In this paper we present an investigation about the out of plane component of the magnetization of Ga-rich sputtered FeGa thin films. To study this magnetic component, we have used magnetometric measurements and magnetic force microscopy combined with a structural characterization by means of x-ray diffractometry. For a more profound analysis, we have examined samples in both, as-grown and annealed state. The out of plane component of the magnetization promotes a magnetic ripple observed by magnetic force microscopy in all the studied samples. To quantitatively monitor the out of plane component of the magnetization, we have used the ratio between the magnetic remanence and the maximum magnetization (Mr/Mmax), i.e. the squareness, measured in the perpendicular hysteresis loops. The experimental results indicate that the out of plane component of the magnetization is reduced upon annealing at a moderate temperature of 400 °C. The experimental results can be understood considering that phase coexistence is the most likely origin for the observed magnetic ripple.

中文翻译：

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溅射的 Fe72Ga28 层的磁化的面外分量

摘要 在本文中，我们研究了富 Ga 溅射 FeGa 薄膜的磁化的面外分量。为了研究这种磁性成分，我们使用了磁力测量和磁力显微镜，并结合了 X 射线衍射的结构表征。为了进行更深入的分析，我们检查了生长状态和退火状态的样品。磁化的平面外分量促进了在所有研究样品中通过磁力显微镜观察到的磁波纹。为了定量监测磁化的平面外分量，我们使用了剩磁和最大磁化强度 (Mr/Mmax) 之间的比率，即垂直磁滞回线中测量的垂直度。实验结果表明，在 400 °C 的中等温度下退火后，磁化的面外分量减少。考虑到相位共存是观察到的磁纹波最可能的起源，可以理解实验结果。