当前位置: X-MOL 学术Microsyst. Technol. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Design and simulation of capacitive SPDT RF MEMS switch to improve its isolation
Microsystem Technologies ( IF 2.1 ) Pub Date : 2020-03-06 , DOI: 10.1007/s00542-020-04795-9
K. Srinivasa Rao , K. Vasantha , K. Girija Sravani

This paper presents the simulation and analysis of capacitive shunt SPDT RF MEMS switch for high radio frequency applications. The design is based on the shunt configuration consisting of 2 capacitive type switches. To reduce pull in voltage, the high-frequency capacitive SPDT switch is proposed. The beam is designed with non-uniform meanders with perforations. By using the COMSOL Multiphysics tool, we found the pull-in voltage as 1.5 V at a beam thickness of 0.5 μm. The corresponding capacitance ratio is 44 for the dielectric of Silicon Nitrate. The up sate and downstate capacitance of the switch is calculated and simulated. The performance analysis is done by using HFSS tool and is found to RF-perform excellently at 28 GHz with isolation of − 68 dB, the return and insertion losses are − 61 dB and − 0.1 dB respectively.



中文翻译:

电容SPDT RF MEMS开关的设计和仿真以改善其隔离度

本文介绍了用于高射频应用的电容并联SPDT RF MEMS开关的仿真和分析。该设计基于由2个电容式开关组成的并联配置。为了降低吸合电压,提出了高频电容式SPDT开关。横梁设计成具有不均匀的曲折且带有穿孔。通过使用COMSOL Multiphysics工具,我们发现束厚为0.5μm时的吸合电压为1.5V。硝酸硅电介质的相应电容比为44。计算并模拟了开关的上升和下降状态电容。使用HFSS工具进行了性能分析,发现该性能在28 GHz时具有出色的RF性能,隔离度为− 68 dB,回波损耗和插入损耗分别为− 61 dB和− 0.1 dB。

更新日期:2020-03-06
down
wechat
bug