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Investigation of Drift Phenomenon in Closed-Loop Capacitive Micro Accelerometers
Journal of Micromechanics and Microengineering ( IF 2.3 ) Pub Date : 2020-06-26 , DOI: 10.1088/1361-6439/ab92eb
Lili Chen 1, 2 , Li Li 1 , Li Zhan 3 , Qing Chen 3 , Xiaoping He 4 , Huijun Yu 5 , Wu Zhou 5
Affiliation  

The drift phenomenon of closed-loop capacitive silicon-based micro accelerometers has been hidering their application in the precise and rapid industrial positioning areas which highly requires a good dynamic performance. This paper, through the theoretical methods and experiments, has invesatigated systematically the underlying mechanism of such a phenomenon. The possible causes of drift, including thermal effects, dynamic response, capacitor charging and dielectric charging appearing in current literature, were considered by the specific tests. As a result, the first three factors were ruled out from the causes of drift by both theoretical derivation and experimental observation, and only the dielectric charging was identified as the most plausible contributor to the drift. The movement of charges in SiOx on electrodes and glass substrate formed an additioal electrostatic field to disturb the system balance and result in the variation of accelerometer output. The proposed material analysis and shielding tests demonstrated that the drift phenomenon of more than 60% tested accelerometers can be explained by the charging effect of dielectric materials while the remaining sensors require further tests and more complicated models to address this drift. The conclusions proposed in this paper show a meaningful guideline to improve the accelerometer performances in order to meet the demand of high accuracy industrial applications.

中文翻译:

闭环电容微加速度计漂移现象的研究

闭环电容式硅基微加速度计的漂移现象一直阻碍其在对动态性能要求较高的精密、快速工业定位领域的应用。本文通过理论方法和实验,系统地研究了这种现象的潜在机制。具体测试考虑了当前文献中出现的漂移的可能原因,包括热效应、动态响应、电容器充电和介电充电。因此,通过理论推导和实验观察,前三个因素被排除在漂移的原因之外,只有电介质充电被确定为漂移的最可能的贡献者。SiOx 中电荷在电极和玻璃基板上的运动形成了额外的静电场,从而扰乱了系统平衡并导致加速度计输出的变化。拟议的材料分析和屏蔽测试表明,超过 60% 的测试加速度计的漂移现象可以通过介电材料的充电效应来解释,而其余传感器需要进一步测试和更复杂的模型来解决这种漂移。本文提出的结论为提高加速度计性能以满足高精度工业应用的需求提供了有意义的指导。拟议的材料分析和屏蔽测试表明,超过 60% 的测试加速度计的漂移现象可以通过介电材料的充电效应来解释,而其余传感器需要进一步测试和更复杂的模型来解决这种漂移。本文提出的结论为提高加速度计性能以满足高精度工业应用的需求提供了有意义的指导。拟议的材料分析和屏蔽测试表明,超过 60% 的测试加速度计的漂移现象可以通过介电材料的充电效应来解释,而其余传感器需要进一步测试和更复杂的模型来解决这种漂移。本文提出的结论为提高加速度计性能以满足高精度工业应用的需求提供了有意义的指导。
更新日期:2020-06-26
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