Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF thanks to its low power, high speed, good CMOS compatibility, etc. In this article, we propose a novel magnetic NVFF based on an emerging memory device called NAND-SPIN. The data writing of NAND-SPIN is achieved by successively applying two unidirectional currents, which respectively generate the spin orbit torque (SOT) and spin transfer torque (STT) for erase and programming operations. This characteristic allows us to design an erase-hidden and drivability-improved magnetic NVFF. Furthermore, more design flexibility could be obtained since the backup operation of the proposed NVFF is not limited by the inherent slave latch. Simulation results show that our proposed NVFF achieves performance improvement in terms of power, delay and area, compared with conventional slave-latch-driven SOT-NVFF designs.

中文翻译：

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具有 NAND-SPIN 器件的擦除隐藏和驱动性改进磁性非易失性触发器

使用电源门控技术的非易失性触发器 (NVFF) 有望克服随着 CMOS 技术的扩展而飙升的泄漏功耗问题。磁性隧道结 (MTJ) 具有低功耗、高速度、良好的 CMOS 兼容性等优点，是构建 NVFF 的理想选择。在本文中，我们提出了一种基于新兴存储器件 NAND-SPIN 的新型磁性 NVFF。NAND-SPIN的数据写入是通过连续施加两个单向电流来实现的，这两个电流分别产生用于擦除和编程操作的自旋轨道扭矩（SOT）和自旋转移扭矩（STT）。这一特性使我们能够设计一种擦除隐藏和改进驾驶性能的磁性 NVFF。此外，由于所提议的 NVFF 的备份操作不受固有从锁存器的限制，因此可以获得更多的设计灵活性。仿真结果表明，与传统的从锁存器驱动的 SOT-NVFF 设计相比，我们提出的 NVFF 在功率、延迟和面积方面实现了性能改进。