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Device design guideline for HfO2-based ferroelectric-gated nanoelectromechanical system
IEEE Journal of the Electron Devices Society ( IF 2.3 ) Pub Date : 2020-01-01 , DOI: 10.1109/jeds.2020.3001272
Chankeun Yoon , Jinhong Min , Jaemin Shin , Changhwan Shin

Previous studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskite ferroelectric materials, which is incompatible in complementary metal–oxide–semiconductor (CMOS) fabrication processes. In this work, a CMOS-compatible HfO2-based ferroelectric material is used for the NC + NEM system. The effects of the ferroelectric properties [i.e., remnant polarization ( $\text{P}_{\mathrm{ r}}$ ) and coercive field ( $\text{E}_{\mathrm{ c}}$ )] on the NC + NEM system performance are studied in detail. The results show that the NC + NEM system can operate as a relay or a memory device depending on the $\text{P}_{\mathrm{ r}}$ and $\text{E}_{\mathrm{ c}}$ values. Moreover, the pull-in/out voltages of the NC + NEM system are more sensitively affected by $\text{E}_{\mathrm{ c}}$ rather than $\text{P}_{\mathrm{ r}}$ and decrease as $\text{E}_{\mathrm{ c}}$ increases. The device design guideline with appropriate $\text{P}_{\mathrm{ r}}$ and $\text{E}_{\mathrm{ c}}$ values of the HfO2-based ferroelectric material is thus developed and discussed to improve the electrical characteristics of NC + NEM relay/memory devices.

中文翻译:

基于 HfO2 的铁电门控纳米机电系统的器件设计指南

先前的研究表明,可以利用铁电材料的负电容 (NC) 效应改善纳米机电 (NEM) 系统的工作电压和能量延迟特性。然而,单独使用 NC 效应的优势已被用于钙钛矿铁电材料,这与互补金属氧化物半导体 (CMOS) 制造工艺不兼容。在这项工作中,一种与 CMOS 兼容的 HfO 2基铁电材料用于 NC + NEM 系统。铁电特性的影响 [即剩余极化 ( $\text{P}_{\mathrm{ r}}$ ) 和强制场 ( $\text{E}_{\mathrm{ c}}$ )]对NC+NEM系统性能进行了详细研究。结果表明,NC + NEM 系统可以作为继电器或存储设备运行,具体取决于 $\text{P}_{\mathrm{ r}}$ $\text{E}_{\mathrm{ c}}$ 值。此外,NC + NEM 系统的拉入/拉出电压受 $\text{E}_{\mathrm{ c}}$ 而不是 $\text{P}_{\mathrm{ r}}$ 并减少为 $\text{E}_{\mathrm{ c}}$ 增加。具有适当的设备设计指南 $\text{P}_{\mathrm{ r}}$ $\text{E}_{\mathrm{ c}}$ 因此开发和讨论了基于HfO 2的铁电材料的值,以改善 NC + NEM 继电器/存储器件的电气特性。
更新日期:2020-01-01
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