In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCD-MOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed effectively due to the lower threshold voltage of the MCD. Therefore, the bipolar degradation issue can be completely solved. In addition, the SiC MCD-MOSFET is featuring superior dynamic characteristics. The input capacitance ( ${C} _{\mathrm{ ISS}}$ ), reverse transfer capacitance ( ${C} _{\mathrm{ RSS}}$ ), gate charge ( ${Q} _{\mathrm{ G}}$ ) and gate-to-drain charge ( ${Q} _{\mathrm{ GD}}$ ) are reduced by a factor of ~2, ~7, ~2 and ~10, respectively, as compared to the conventional SiC MOSFET (SiC C-MOSFET). Combined with the slightly increased on-resistance ( ${R} _{\mathrm{ ON}}$ ), tremendously enhanced figures of merit ( ${R} _{\mathrm{ ON}} \times {Q}_{\mathrm{ G}}$ and ${R} _{\mathrm{ ON}} \times {Q}_{\mathrm{ GD}}$ are decreased by a factor of 1.8 and 9, respectively) are obtained in the SiC MCD-MOSFET. The outstanding performance and easy-to-implement feature make the SiC MCD-MOSFET more attractive for further power electronic applications.

中文翻译：

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具有内置反向 MOS 沟道二极管以提高性能的 SiC 平面 MOSFET

在本文中，使用 TCAD 仿真工具研究了具有内置反向 MOS 沟道二极管 (SiC MCD-MOSFET) 的 SiC 平面 MOSFET。当器件作为续流二极管工作时，由于 MCD 的阈值电压较低，寄生体二极管的工作得到有效抑制。因此，可以完全解决双极退化问题。此外，SiC MCD-MOSFET 具有卓越的动态特性。输入电容（ ${C} _{\mathrm{ ISS}}$ )、反向传输电容( ${C} _{\mathrm{ RSS}}$ ), 栅极电荷 ( ${Q} _{\mathrm{ G}}$ ) 和栅漏电荷 ( ${Q} _{\mathrm{ GD}}$ ) 与传统的 SiC MOSFET (SiC C-MOSFET) 相比，分别降低了 ~2、~7、~2 和 ~10 倍。结合略微增加的导通电阻（ ${R} _{\mathrm{ ON}}$ ), 极大地提高了品质因数 ( ${R} _{\mathrm{ ON}} \times {Q}_{\mathrm{ G}}$ 和 ${R} _{\mathrm{ ON}} \times {Q}_{\mathrm{ GD}}$ 分别降低了 1.8 和 9 倍）在 SiC MCD-MOSFET 中获得。出色的性能和易于实施的特性使 SiC MCD-MOSFET 对进一步的电力电子应用更具吸引力。