GaN-based vertical cavity surface emitting laser (VCSEL) features the quasi-vertical architecture, and thus a poor lateral current can be encountered, which can significantly reduce the net modal gain and decrease the lasing power. To prevent the holes from lateral leaking outside of the aperture region, we propose GaN based VCSELs with an NP-GaN structure below the buried insulator layer. The reverse biased NP-GaN junction can produce energy barrier that can better suppress the lateral hole leakage outside of the aperture, therefore the better stimulated radiative rate and device lasing power are obtained. Moreover, we also conduct parametric study regarding the impact of different NP-GaN junction designs with various doping concentrations and architectural sizes for the p-GaN layer on the lateral hole confinement capability.

中文翻译：

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通过使用反向偏置 NP 结，有效地将横向电流限制在基于 GaN 的 VCSEL 的孔径内

GaN基垂直腔面发射激光器（VCSEL）具有准垂直结构，因此可能会遇到较差的横向电流，这可以显着降低净模态增益并降低激光功率。为了防止孔横向泄漏到孔径区域之外，我们提出了基于 GaN 的 VCSEL，在掩埋绝缘体层下方具有 NP-GaN 结构。反向偏置的NP-GaN结可以产生能垒，可以更好地抑制孔径外的横向空穴泄漏，从而获得更好的受激辐射率和器件激光功率。此外，我们还对具有不同掺杂浓度和 p-GaN 层结构尺寸的不同 NP-GaN 结设计对横向空穴限制能力的影响进行了参数研究。