Heterojunction band offset parameters are critical for designing and fabricating junction-based devices as these parameters play a crucial role in determining the optical and electronic properties of a device. Herein, we report the band discontinuities at the MoS2/III-nitride (InN, GaN, and AlN) heterointerfaces. Few-layer MoS2 thin films are deposited by pulsed laser deposition on III-nitrides/c-sapphire substrates. Band offsets [valence band offset (VBO) and conduction band offset (CBO)] at the heterojunctions are determined by high-resolution x-ray photoelectron spectroscopy. The estimated band alignments are found to be type-I (VBO: 2.34 eV, CBO: 2.59 eV), type-II (VBO: 2.38 eV, CBO: 0.32 eV), and type-III (VBO: 2.23 eV, CBO: 2.87 eV) for MoS2/AlN, MoS2/GaN, and MoS2/InN, respectively. Such determination of the band offsets of 2D/3D heterojunctions paves a way to understand and design the futuristic photonic and electronic devices using these material systems.

中文翻译：

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MoS2/(Al, Ga, In)N 异质界面处不同类型的能带排列

异质结带偏移参数对于设计和制造基于结的器件至关重要，因为这些参数在确定器件的光学和电子特性方面起着至关重要的作用。在此，我们报告了 MoS2/III 氮化物（InN、GaN 和 AlN）异质界面处的能带不连续性。通过脉冲激光沉积在 III 族氮化物/c-蓝宝石衬底上沉积少层 MoS2 薄膜。异质结处的带偏移 [价带偏移 (VBO) 和导带偏移 (CBO)] 由高分辨率 X 射线光电子能谱确定。估计的带对齐被发现是 I 型（VBO：2.34 eV，CBO：2.59 eV）、II 型（VBO：2.38 eV，CBO：0.32 eV）和 III 型（VBO：2.23 eV，CBO： MoS2/AlN、MoS2/GaN 和 MoS2/InN 分别为 2.87 eV)。