Two methods of measuring the electronic transport properties of a material are transistor DC-voltage and the Hall effect. Hall mobility measurements of normally off semiconductors can be done by electrostatic doping to lower resistance in the channel. We show that by measuring both, we can compare any value (raw measured as well as calculated data) directly to any other value along an index of FET gate and drain voltage across the entire safe operating area of the device. Our gated Hall technique intrinsic calculations of Hall mobility, typically possible only for bulk or doped materials, for thin-film transistor materials stack up with thickness scaled to practical values.

中文翻译：

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e-mode ZnO TFT 的门控霍尔和场效应传输特性

测量材料电子传输特性的两种方法是晶体管直流电压和霍尔效应。常关半导体的霍尔迁移率测量可以通过静电掺杂来降低通道中的电阻。我们表明，通过测量两者，我们可以直接将任何值（原始测量数据和计算数据）与器件整个安全工作区域内沿 FET 栅极和漏极电压指数的任何其他值进行比较。我们的门控霍尔技术对霍尔迁移率进行了本征计算，通常仅适用于块状或掺杂材料，对于薄膜晶体管材料堆叠，厚度按实际值缩放。