Abstract We present a study on the effect of high dose (kGy) electron beams on pure silica core fibers through examining the following phenomena within the fibers: radioluminescence (RL), radiation induced attenuation (RIA), and recovery. The objective is to identify the relevant characteristics of these fibers having favourable radiation response, that can be utilized in the development of dose measurement systems for high dose (kGy) environments. Two types of 20 m long pure silica optical fiber samples have been used, differing in their concentrations of hydroxyl (OH) content. Segments of 3.5 m length from each fiber were wound into coils of radius ~25 cm and exposed to consecutive irradiation doses, in the order of tens of kGy (10 kGy through 70 kGy in individual exposures), leading to a cumulative dose of some 300 kGy. The low-OH fiber showed saturation of response at the shorter wavelengths of the RL spectrum for doses of 30 kGy and above, resulting from presence of Oxygen Defect Centers (ODC). At the longer wavelengths the RL response of the low-OH optical fibers is observed to increase with dose, attributed to various bonding structural defects of silica nanoclusters. The saturation effect at shorter wavelengths is less prominent in the high-OH samples, where a monotonic increase is observed up to ~60 kGy indicating the formation of radiation induced ODC beyond this point. For cumulative dose of ~70 kGy, the highest RIA losses were registered at 550 nm (12.74 dB/m) for low-OH sample, and at 460 nm (4.75 dB/m) for high-OH sample. The high-OH sample showed much faster recovery post-irradiation, making it more suitable for repeated usage. Both the RL and RIA phenomena observed herein show the feasibility of pure silica optical fibers for dose measurement in high dose (kGy) environments up to individual dose of ~70 kGy.

中文翻译：

---

暴露于kGy电子束的纯石英光纤中羟基含量的影响

摘要 我们通过检查光纤内的以下现象来研究高剂量 (kGy) 电子束对纯石英纤芯光纤的影响：辐射发光 (RL)、辐射诱导衰减 (RIA) 和恢复。目的是确定这些具有良好辐射响应的光纤的相关特性，可用于开发用于高剂量 (kGy) 环境的剂量测量系统。使用了两种 20 m 长的纯石英光纤样品，它们的羟基 (OH) 含量浓度不同。将每根光纤长度为 3.5 m 的部分缠绕成半径 ~25 cm 的线圈，并暴露于连续照射剂量，数量级为数十 kGy（在单个照射中为 10 kGy 至 70 kGy），导致累积剂量约为 300公斤。由于氧缺陷中心 (ODC) 的存在，低 OH 光纤在 RL 光谱的较短波长处对 30 kGy 及以上的剂量显示出响应饱和。在较长的波长下，观察到低 OH 光纤的 RL 响应随剂量增加，这归因于二氧化硅纳米团簇的各种键合结构缺陷。在高 OH 样品中，较短波长下的饱和效应不那么明显，其中观察到单调增加高达 ~60 kGy，表明超过这一点的辐射诱导 ODC 的形成。对于 ~70 kGy 的累积剂量，低 OH 样品在 550 nm (12.74 dB/m) 和高 OH 样品在 460 nm (4.75 dB/m) 处记录到最高的 RIA 损失。高 OH 样品在辐照后显示出更快的恢复，使其更适合重复使用。