Abstract—

We have studied the effect of doping with Sn (0.004 and 0.008 at %) on the properties of Bridgman-grown single crystals of an n-type Bi₂Te_1.5Se_1.5 solid solution. Thermoelectric power, electrical conductivity, thermal conductivity, and Hall effect measurements in the range 77–400 K have shown that Sn influences the electrical transport properties of the solid solution. Single crystals with the composition Bi_1.9996Sn_0.0004Te_1.5Se_1.5 have higher thermoelectric efficiency in the temperature range 300–370 K than does the Sn-free solid solution. Moreover, measurements of thermoelectric power, which is rather sensitive to carrier concentration fluctuations, have demonstrated that the Sn-doped single crystals have highly uniform electrical properties along their length and across this direction.

中文翻译：

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Sn掺杂Bi 2 Te 1.5 Se 1.5固溶体的电输运性质

摘要-

我们已经研究了掺杂Sn（0.004和0.008 at％）对n型Bi ₂ Te _1.5 Se _1.5固溶体的Bridgman生长单晶性能的影响。在77-400 K范围内的热电功率，电导率，热导率和霍尔效应测量结果表明，锡会影响固溶体的电传输性质。组成Bi _1.9996 Sn _0.0004 Te _1.5 Se _1.5的单晶在300-370 K的温度范围内具有比无锡固溶体更高的热电效率。此外，对载流子浓度波动相当敏感的热电功率测量结果表明，掺Sn单晶沿其长度和整个方向具有高度均匀的电性能。