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Studying the switching variability in redox-based resistive switching devices
Journal of Computational Electronics ( IF 2.1 ) Pub Date : 2020-06-24 , DOI: 10.1007/s10825-020-01537-y
Elhameh Abbaspour , Stephan Menzel , Christoph Jungemann

The variability of switching parameters in redox-based resistive switching RAM (ReRAM) devices is investigated by a 3D kinetic Monte Carlo approach. This physics-based model can simulate the filamentary resistive switching in the electroforming, SET and RESET processes and captures their key features. It allows to predict the impact of the forming and switching conditions on the fluctuations of key parameters like the current and resistance levels of the cell in on and off states. The origin of the variability of the switching parameters was investigated in terms of the involved physical processes. The simulations also confirm the multilevel cell operation capabilities of ReRAM devices.



中文翻译:

研究基于氧化还原的电阻式开关器件中的开关变异性

通过3D动力学蒙特卡洛方法研究了基于氧化还原的电阻式开关RAM(ReRAM)器件中开关参数的可变性。这个基于物理的模型可以模拟电铸,SET和RESET过程中的丝状电阻切换,并捕获其关键特征。它允许预测成形和开关条件对关键参数(如处于开和关状态的电池的电流和电阻水平)波动的影响。根据涉及的物理过程研究了切换参数的可变性的起源。仿真还证实了ReRAM器件的多级单元操作能力。

更新日期:2020-06-25
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