Two different boron precursors, diborane (B₂H₆) and trimethyl boron ((CH₃)₃B, TMB), are investigated for chemical vapor‐phase deposition (CVD)‐grown hexagonal boron nitride (h‐BN) on α‐Al₂O₃ (0001) substrates. The BN layer grown using TMB includes a large amount (2 × 10²⁰ cm⁻³) of carbon atoms, which is 60 times higher than that in the BN layer grown using B₂H₆. The X‐ray diffraction 2θ/ω scans for BN film grown using B₂H₆ exhibit the h‐BN (002) peak. The BN film obtained using TMB includes turbostratic BN (t‐BN). The E_2g Raman peak frequencies in B₂H₆ and TMB h‐BN are observed at 1368.8 and 1369.7 cm⁻¹, respectively. The Raman peak shift to a higher frequency indicates that a larger compressive strain is induced using TMB than using B₂H₆. The full width at half maximum of the B₂H₆ and TMB Raman peak frequencies is 21.8 and 42.7 cm⁻¹, respectively. The cathodoluminescence spectra of B₂H₆ h‐BN show the band‐edge emissions at 225 and 232 nm, whereas only a 300 nm broadband is obtained in TMB h‐BN. It is suggested that the carbon atoms in TMB prevent the formation of highly crystalline h‐BN thin films.

中文翻译：

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化学气相沉积生长六方氮化硼薄膜的硼前驱体的比较研究

研究了两种不同的硼前体乙硼烷（B ₂ H ₆）和三甲基硼（（CH ₃）₃ B，TMB ）在α-上化学气相沉积（CVD）生长的六方氮化硼（h -BN）的情况。 Al ₂ O ₃（0001）衬底。使用TMB生长的BN层包含大量（2×10 ²⁰  cm ^-3）碳原子，这比使用B ₂ H ₆生长的BN层高60倍。X射线衍射2 θ / ω扫描使用乙BN薄膜生长₂ ħ ₆表现出ħ-BN（002）峰值。使用TMB获得的BN膜包括涡轮层BN（t -BN）。在B ₂ H ₆和TMB h -BN中的E _2g拉曼峰频率分别在1368.8和1369.7 cm ^-1处观察到。拉曼峰移至较高频率表明，使用TMB产生的压缩应变大于使用B ₂ H ₆产生的压缩应变。B ₂ H ₆和TMB拉曼峰频率的半峰全宽分别为21.8和42.7 cm ^-1。B ₂ H ₆ h的阴极发光光谱 ‐BN显示225和232 nm的频带边缘发射，而TMB h ‐BN仅获得300 nm宽带。建议TMB中的碳原子阻止形成高度结晶的h- BN薄膜。