Abstract Herein, TiO2 heterojunctions were fabricated by sol gel spin coating technique as a function of Fe doping. The effect of Fe doping on the optical, structural, morphological properties of TiO2 thin films and electro-optical properties of their photodiode applications have been investigated. The XRD results have not showed peaks, which implies that the all films are amorphous. The E g values of thin films decreased with increasing Fe concentration. As result of I − V measurements of diodes under dark and light conditions, all diodes demonstrated photo characteristic behavior. The barrier height values of diodes varied between 0.68 eV and 0.70 eV. The lowest ideality factor was obtained from 2% Fe: TiO2/p-Si diode and was found to be 4.75. The highest photosensitivity of 1.53 × 104 was obtained from 6% Fe: TiO2. In addition, the C − V , G − V and R s − V measurement were taken at different frequencies and analyzed. Moreover, the obtained results showed that the performances of fabricated diodes could be governed by the Fe doping.

中文翻译：

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Fe掺杂剂对TiO2薄膜结构、光学性能和TiO2基光电二极管电性能的影响

摘要 在本文中，TiO2 异质结是通过溶胶凝胶旋涂技术制备的，作为 Fe 掺杂的函数。已经研究了 Fe 掺杂对 TiO2 薄膜的光学、结构、形态特性及其光电二极管应用的电光特性的影响。XRD 结果没有显示峰，这意味着所有薄膜都是非晶态的。薄膜的 E g 值随着 Fe 浓度的增加而降低。作为二极管在黑暗和光照条件下的 I - V 测量结果，所有二极管都表现出光特性行为。二极管的势垒高度值在 0.68 eV 和 0.70 eV 之间变化。最低的理想因子是从 2% Fe: TiO2/p-Si 二极管获得的，结果为 4.75。1.53 × 104 的最高光敏度是从 6% Fe: TiO2 获得的。此外，C − V ，G - V 和 R s - V 在不同频率下进行测量并进行分析。此外，获得的结果表明，制造的二极管的性能可以通过 Fe 掺杂来控制。