Antimony doped barium-stannate dense ceramic materials were synthesized using spark plasma sintering technique out of mechanically activated precursor powders. The influence of various Sb concentrations (x = 0.00 – 0.10) on properties of BaSn_1-xSb_xO₃ ceramics was investigated. Relative densities of prepared samples were in the range of (79–96) %. TEM analysis revealed the presence of many dislocations in undoped BaSnO₃, and their significant reduction upon doping with Sb. All samples except BaSn_0.92Sb_0.08O₃ exhibit non-linear I-U characteristic, typical for semiconductors with potential barrier at grain boundaries. Low angle grain boundaries found only in BaSn_0.92Sb_0.08O₃ caused the loss of potential barrier at grain boundaries which was confirmed by AC impedance spectroscopy measurements. Consequently, BaSn_0.92Sb_0.08O₃ showed the lowest electrical resistivity and linear I-U characteristic. UV–vis analysis confirmed the increasing of band gap (Burstein–Moss shift) values in all doped samples.

利用火花等离子体烧结技术从机械活化的前驱体粉末中合成了锑掺杂的锡酸钡致密陶瓷材料。研究了各种Sb浓度（x = 0.00 – 0.10）对BaSn _{1- x} Sb _x O ₃陶瓷性能的影响。制备样品的相对密度在（79–96）％的范围内。TEM分析表明，在未掺杂的BaSnO _3中存在许多位错，并且在掺杂Sb后它们显着减少。除BaSn _0.92 Sb _0.08 O ₃以外的所有样品均显示非线性IU特性，典型用于在晶界处具有势垒的半导体。仅在BaSn _0.92 Sb _0.08 O _3中发现的低角度晶界导致晶界处势垒的损失，这已通过交流阻抗谱测量得到了证实。因此，BaSn _0.92 Sb _0.08 O ₃表现出最低的电阻率和线性IU特性。紫外可见分析证实了所有掺杂样品中的带隙（伯斯坦-莫斯频移）值都在增加。