In this work, we studied the effect of high-pressure deuterium annealing (HPDA) on p-type omega-gate nanowire field effect transistor by random telegraph noise (RTN) signal analysis. After HPDA under the condition of 400 °C and 10 atm for 30 minutes, IOFFdecreases by 41.2 % and IONincreases up to 5.4 %. Also, SS is reduced from 72 mV/dec to 70 mV/dec. In RTN analysis, multi-level RTN is reduced to single-level RTN due to the passivation of a fast trap site by HPDA. ΔID/IDis also decreased 1.3 and 1.1 times at VOV=0.2 V and 0.4 V, respectively. From the low frequency noise analysis, the reduction of trap density is observed by 86 % at VOV=0.4 V after HPDA. Through these results, we found that the HPDA reduces traps of gate dielectric and improves the quality of interface between gate dielectric and NW channel in p-type OGNW FET.

中文翻译：

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通过高压氘退火降低 p 型 omega 栅极纳米线 FET 的随机电报噪声

在这项工作中，我们通过随机电报噪声 (RTN) 信号分析研究了高压氘退火 (HPDA) 对 p 型欧米茄栅极纳米线场效应晶体管的影响。HPDA在400°C和10atm条件下30分钟后，IOFF下降41.2%，ION上升5.4%。此外，SS 从 72 mV/dec 降低到 70 mV/dec。在 RTN 分析中，由于 HPDA 对快速陷阱位点的钝化，多级 RTN 减少为单级 RTN。在 VOV=0.2 V 和 0.4 V 时，ΔID/IDis 也分别下降了 1.3 倍和 1.1 倍。从低频噪声分析来看，HPDA 后 VOV=0.4 V 时陷阱密度降低了 86%。通过这些结果，我们发现 HPDA 减少了栅极电介质的陷阱，并提高了 p 型 OGNW FET 中栅极电介质和 NW 沟道之间的界面质量。