A Si nanoparticle paste has been studied to form a Si film on a substrate. Rapid thermal annealing (RTA) was conducted in order to recrystallize the Si paste which were prepared by a planetary ball milling (PBM) grinding n-doped or p-doped Si chips. It was possible to minimize the oxidation during the melting process of Si nanoparticles with this RTA even at 1200 °C in 1 s. Lowering of the melting temperature appears to be due to the size effect and release of surface energy from the Si nanoparticles. RTA was conducted in an infrared furnace with temperatures varying from 1150 to 1300 °C. Si pn homo-junction structure was also fabricated by coating p-type followed by n-type Si pastes on a carbon substrate. Typical rectifying characteristics and slight photo-induced current was observed.

中文翻译：

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硅膏薄膜的快速热退火和 pn 结的形成

已经研究了硅纳米颗粒糊剂以在基板上形成硅膜。进行快速热退火 (RTA) 以重结晶通过行星式球磨 (PBM) 研磨 n 掺杂或 p 掺杂硅芯片制备的硅浆。即使在 1200 °C 下 1 秒内，使用该 RTA 也可以最大限度地减少 Si 纳米颗粒熔化过程中的氧化。熔化温度的降低似乎是由于尺寸效应和 Si 纳米粒子表面能的释放。RTA 在红外炉中进行，温度范围为 1150 至 1300 °C。Si pn 同质结结构也通过在碳基板上涂覆 p 型和 n 型硅浆来制造。观察到典型的整流特性和轻微的光感应电流。