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Modulation of the Anisotropic Electronic Properties in ReS2 via Ferroelectric Film
CCS Chemistry ( IF 11.2 ) Pub Date : 2019-08-01 , DOI: 10.31635/ccschem.019.20180024
Renyan Wang , Fengya Zhou , Liang Lv , Shasha Zhou , Yiwei Yu , Fuwei Zhuge , Huiqiao Li , Lin Gan & Tianyou Zhai

Anisotropic response in two-dimensional materials has emerged with attractive potential applications in angle-sensitive areas. However, the challenge with current studies on anisotropic response is due to the main use of the structural materials of pristine to examine the physical properties in different directions, which cause restriction of the anisotropic ratio within a narrow range, thereby, limiting their practical applications. Herein, we aimed at developing a novel strategy to effectively modulate the electronic anisotropic ratio by employing rhenium disulfide (ReS 2) nanosheet in a nondestructive fashion. We integrated a thin film of ferroelectric poly(vinylidene fluoride- co-trifluoroethylene) P(VDF-TrFE) on top of ReS 2 nanosheet and modulated the conductivity of ReS 2 within specific directions via selective polarization of the ferroelectric film. Our results demonstrated that the electronic anisotropic ratio was enhanced remarkably from the initial 1.4 to as high as ∥12.0. Thus, we concluded that this strategy is compatible with conventional processes in the semiconductor industry and may pave the way for emerging angle-sensitive applications in the near future.

中文翻译:

通过铁电薄膜调制ReS2中的各向异性电子性质

二维材料中的各向异性响应已经出现,并且在角度敏感区域中具有诱人的潜在应用。然而,当前对各向异性响应的研究面临的挑战是由于主要使用原始结构材料来检查不同方向上的物理性质,这导致各向异性比率限制在狭窄的范围内,从而限制了它们的实际应用。在本文中,我们旨在开发一种新颖的策略,以无损方式使用二硫化ulf(ReS 2)纳米片有效地调节电子各向异性比。我们在ReS 2纳米片的顶部集成了铁电聚偏二氟乙烯-三氟乙烯共聚物P(VDF-TrFE)薄膜,并通过铁电薄膜的选择性极化在特定方向上调节了ReS 2的电导率。我们的结果表明,电子各向异性比从最初的1.4显着提高到高达∥12.0。因此,我们得出的结论是,该策略与半导体工业中的常规工艺兼容,并可能在不久的将来为新兴的角度敏感型应用铺平道路。
更新日期:2020-06-24
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