Indium (In)-based halide perovskites are desirable for next-generation phosphors and emitting devices, due to their broad emission, nontoxicity, and oxidization avoidance capabilities. However, the In-based perovskites always exhibit low external photoluminescence quantum efficiency (PLQE) as a result of their weak light absorption near the corresponding excitation region, and thus, are limited in extended applications. Herein, we have developed an antimony (Sb)-doping strategy to improve the absorption ability of Cs2InCl5·H2O in the ultraviolet region. Excitingly, we obtained a warm-light phosphor with ultrahigh external (internal) PLQE of 72.8% (86.7%). Typically, upon 1.5% Sb doping, the single-crystalline Cs2InCl5·H2O perovskite displayed a stronger warm-light emission at ～ 610 nm with a large Stokes shift of 295 nm and full width at half maximum (FWHM) of 164 nm. Density functional theory (DFT) calculations revealed that the Sb-doping induced an impurity level in the bandgap, increasing the density of state (DOS), and promoted more carriers into the conduction band maximum. Furthermore, external PLQE from 18% to 59% could be realized in other zero-dimensional In-based perovskites through the same doping strategy.

中文翻译：

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锑掺杂诱导铟基零维钙钛矿中的高效暖白发射。

基于铟（铟）的卤化物钙钛矿因其广泛的发射，无毒和避免氧化的能力而成为下一代磷光体和发射器件的理想之选。然而，由于In基钙钛矿由于在相应的激发区域附近的弱光吸收而总是表现出低的外部光致发光量子效率（PLQE），因此在扩展应用中受到限制。在这里，我们已经开发了一种锑（Sb）掺杂策略，以提高Cs2InCl5·H2O在紫外区域的吸收能力。令人兴奋的是，我们获得了一种具有超高外部（内部）PLQE为72.8％（86.7％）的暖光荧光粉。通常，在掺杂1.5％的锑时，单晶Cs2InCl5·H2O钙钛矿在〜610 nm处显示较强的暖光发射，较大的Stokes位移为295 nm，半峰全宽（FWHM）为164 nm。密度泛函理论（DFT）计算表明，掺Sb会在带隙中引起杂质能级，从而增加态密度（DOS），并促使更多的载流子进入导带最大值。此外，通过相同的掺杂策略，可以在其他零维In基钙钛矿中实现18％至59％的外部PLQE。