当前位置: X-MOL 学术Chin. Phys. Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Symmetry Breaking and Reversible Hydrogenation of Two-Dimensional Semiconductor Sn 2 Bi
Chinese Physics Letters ( IF 3.5 ) Pub Date : 2020-06-22 , DOI: 10.1088/0256-307x/37/6/066802
Xuguang Wang 1, 2 , Bingyu Xia 3 , Jian Gou 1, 2 , Peng Cheng 1, 2 , Yong Xu 3 , Lan Chen 1, 2 , Kehui Wu 1, 2, 4
Affiliation  

The hydrogenation of two-dimensional (2D) systems can efficiently modify the physical and chemical properties of materials. Here we report a systematic study on the hydrogenation of 2D semiconductor Sn 2 Bi on Si(111) by scanning tunneling microscopy experiments and first principle calculations. The unique butterfly-like and trench-like features were observed for single H adsorption sites and hydrogen-saturated surfaces respectively, from which the bridge-site adsorption geometry can be unambiguously determined. The structural model was further confirmed by the theoretical calculations, which is in good agreement with the experimental observation. In addition, the hydrogenation is found to vanish the flat band of Sn 2 Bi and increase the band gap obviously.

中文翻译:

二维半导体Sn 2 Bi的对称破坏和可逆加氢

二维(2D)系统的氢化可以有效地改变材料的物理和化学性质。在这里,我们通过扫描隧道显微镜实验和第一性原理计算,对Si(111)上2D半导体Sn 2 Bi的氢化进行了系统的研究。分别对单个H吸附位点和氢饱和表面观察到独特的蝴蝶状和沟槽状特征,由此可以明确确定桥位吸附几何形状。理论计算进一步证实了该结构模型,与实验结果吻合良好。另外,发现氢化消除了Sn 2 Bi的平坦带并明显增加了带隙。
更新日期:2020-06-23
down
wechat
bug