Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to the δ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. The carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

氢光刻技术已被用于对基于膦的表面化学进行模板化以制造原子级器件，该过程我们简称为原子精密先进制造（APAM）。在这里，我们使用中红外可变角度椭圆偏振光谱法（IR-VASE）来表征使用APAM兼容工艺制成的硅中的单纳米厚度磷掺杂剂层（δ层）。大的Drude响应直接归因于δ层，并且在集成其他处理步骤时可用于APAM层状况的无损监视。从我们的室温IR-VASE测量中提取的载流子密度和迁移率与低温磁传输测量一致，表明APAMδ层在室温下起作用。最后，从这些测量中提取的介电常数表明，APAMδ层中的掺杂非常大，以至于它们的低频面内响应让人联想到硅化物。但是，没有迹象表明存在等离子体共振，这可能是由于尺寸减小和/或散射寿命低所致。