Herein, Ta₂O₅/Ta interface‐based TiN/Ta₂O₅/Ta and TiN/HfO₂/Ta₂O₅/Ta resistance switched (RS) stacks are investigated. The stacks reveal area‐dependent RS behavior indicating nonfilamentary (homogeneous) current transport. The nonfilamentary nature of the stacks provides high reproducibility of current–voltage hysteresis loops and the absence of electroforming. It is demonstrated that the nature of the current hysteresis in single Ta₂O₅‐based stacks obeys space‐charge‐limited conduction, and the space charge responsible for this behavior is formed by filled/emptied traps at the Ta/Ta₂O₅ interface. Due to the high potential barrier at the TiN/HfO₂ interface, as measured using X‐ray photoelectron spectroscopy, sufficiently thick HfO₂ (≈4 nm) blocks the trapping/detrapping process, thereby reducing the current hysteresis. The evaluated current mechanism results in a high rectification ratio of the TiN/Ta₂O₅/Ta device of ≈1.6 × 10⁴. However, relatively short retention is inherent to the observed switching mechanism.

中文翻译：

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非丝状自整流TiN / Ta2O5 / Ta和TiN / HfO2 / Ta2O5 / Ta堆的电阻转换特性

本文研究了基于Ta ₂ O ₅ / Ta界面的TiN / Ta ₂ O ₅ / Ta和TiN / HfO ₂ / Ta ₂ O ₅ / Ta电阻转换（RS）堆。堆层显示了与区域有关的RS行为，表明非丝状（均质）电流传输。叠层的非丝状特性提供了电流-电压磁滞回线的高可重复性，并且没有电铸。结果表明，单个基于Ta ₂ O ₅的堆中电流滞后的性质遵循空间电荷受限的传导，并且负责此行为的空间电荷是由Ta / Ta ₂处的填充/空陷阱形成的O ₅接口。由于使用X射线光电子能谱仪测量到的TiN / HfO ₂界面处的高势垒，足够厚的HfO ₂（≈4nm）阻止了俘获/去俘获过程，从而降低了电流滞后。评估的电流机制导致TiN / Ta ₂ O ₅ / Ta器件的高整流比≈1.6×10 ⁴。但是，相对较短的保留时间是观察到的切换机制所固有的。