Large surface area exfoliation of the hydrogen (H)‐implanted Ge is investigated in this work. H⁺ ions with a fluence of 1 × 10¹⁷ cm⁻² are implanted in Ge samples at liquid nitrogen and room temperature (RT). The formation of surface blisters and craters is observed in the samples annealed between 300 and 450 °C after implantation. Interestingly, samples implanted at RT show large surface area exfoliation extending over several hundreds of micrometer region after annealing. Secondary ion mass spectroscopy (SIMS) and depth‐resolved Raman spectroscopy are used to characterize the depth profile of implanted H⁺ ions and stress in the damage region, respectively. The formation of the damage band filled with extended planar defects in the form of nanocracks is observed using a cross‐sectional transmission electron microscope (TEM). The physical understanding of the H‐induced internal pressure and stress in the surface blisters/craters is carried out using Föppl–von Karman theory of thin plates.

中文翻译：

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氢注入锗大表面积剥落的观察

在这项工作中研究了氢（H）注入的锗的大表面积剥落。在液氮和室温（RT）下，将注量为1×10 ¹⁷  cm ^-2的H ⁺离子注入Ge样品中。植入后在300至450°C之间退火的样品中观察到了表面起泡和凹陷的形成。有趣的是，在室温下植入的样品在退火后显示出大的表面积剥落，延伸超过数百微米。二次离子质谱（SIMS）和深度分辨拉曼光谱用于表征注入的H ⁺的深度分布离子和损伤区域中的应力。使用横截面透射电子显微镜（TEM）观察到形成了以纳米裂纹形式扩展的平面缺陷的损伤带的形成。使用Föppl–von Karman薄板理论对表面起泡/凹坑中H引起的内部压力和应力的物理理解。