Abstract Ge n+/p junctions fabricated by conventional ion implantation (CII) and plasma immersion ion implantation (PIII) are compared in this work. To achieve low junction leakage current, PIII-implanted Ge n+/p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current, which may be contributed to the residual hydrogen and hydrogen-related defects. It is demonstrated that with 500 °C annealing, well-behaved Ge n+/p junction with ultra-shallow junction depth (

中文翻译：

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通过等离子体浸入离子注入实现性能良好的 Gen+/p 浅结

摘要 在这项工作中比较了通过常规离子注入（CII）和等离子体浸没离子注入（PIII）制造的 Gen+/p 结。为了实现低结漏电流，注入 PIII 的 Gen+/p 结需要更高的退火温度以消除肖克利-读取-霍尔生成电流，这可能会导致残留氢和氢相关缺陷。结果表明，在 500 °C 退火后，性能良好的 Gen+/p 结具有超浅结深度（