Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: The more closely they match, the better the film quality is. Topological insulators (TI) such as Bi₂Se₃ thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe₃ bulk crystal as the best substrate for Bi₂Se₃ thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe₃ substrate. BiInSe₃ substrate could accelerate the advance of TI research and applications.

外延膜的质量在很大程度上取决于它们与基底的结构和化学匹配：它们之间的匹配越紧密，膜的质量就越好。诸如Bi ₂ Se ₃薄膜的拓扑绝缘体（TI）也不例外。但是，不存在在结构上和化学上都与TI薄膜相匹配的商用基材，其水平可用于其他电子材料。在这里，我们介绍BiInSe ₃块状晶体作为Bi ₂ Se ₃薄膜的最佳衬底。由于BiInSe ₃提供的结构和化学匹配，与其他基板相比，这些膜具有优异的表面形态，更低的缺陷密度和更高的霍尔迁移率。基质。BiInSe ₃衬底可以加速TI研究和应用的发展。