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Investigating the effect of Zn doping on physical properties of nanostructured Sb 2 S 3 thin films by dip-coating technique
Applied Physics A ( IF 2.7 ) Pub Date : 2020-06-23 , DOI: 10.1007/s00339-020-03734-9
F. Chharganeh Kalangestani , F. E. Ghodsi , Z. Bazhan

In this research, the effect of zinc doping on physical properties of Sb2S3 thin films grown by the sol–gel dip-coating method, on the glass substrates was investigated. XRD patterns indicated that the Znx(Sb2S3)1-x (x = 0.02, 0.05, 0.07, 0.1) thin films have orthorhombic crystalline structure while the intensity of the peaks decreased with increasing Zn contamination. The FESEM images demonstrated that the grain size decreased with increasing Zn concentration. The porosity of the samples changed by different values of Zn. The optical transmission spectra exhibited a shift in the absorption edge for various zinc concentrations. The refractive index of sample with x = 0.02 has the highest value among all samples. In addition, the band gap of thin films is about 2.4–3.6 eV. The PL spectra showed the doped sample with the x value of 0.02 which has the highest visible emission. Also, the contact angle measurements showed that the surface of the films were hydrophilic.

中文翻译:

浸涂法研究Zn掺杂对Sb 2 S 3纳米结构薄膜的物理性能的影响

在这项研究中,研究了锌掺杂对通过溶胶-凝胶浸涂法在玻璃基板上生长的Sb 2 S 3薄膜的物理性能的影响。XRD图谱表明Zn x(Sb 2 S 31- xx = 0.02、0.05、0.07、0.1)的薄膜具有正交晶体结构,而峰的强度随Zn污染的增加而降低。FESEM图像表明,晶粒尺寸随着Zn浓度的增加而减小。样品的孔隙率因锌的不同值而改变。对于各种锌浓度,光透射光谱显示出吸收边缘的偏移。 在所有样品中,x = 0.02的样品的折射率最高。此外,薄膜的带隙约为2.4–3.6 eV。PL光谱显示x值为0.02的掺杂样品,其具有最高可见光发射。另外,接触角测量表明膜的表面是亲水的。
更新日期:2020-06-23
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