A photoconductive gain (up to 400%) is observed in a 4-hydroxycyanobenzene (4HCB, C 7 H 5 NO) bulk organic semiconducting detector, resulting in a high sensitivity of38.8 μ C Gy air −1 s −1 cm −2 under 50 kVp X-ray beam irradiation. The gain variation tendency as the function of both the applied bias voltage and the incident X-ray dose rate is revealed. A rising stage at the gain versus dose rate curve is observed at the low-flux range of X-ray irradiation, attributed to the trap-filling process. A deep-trapping dependent model is proposed, in which the hole injection assisted by trapped electrons is responsible for the gain.

中文翻译：

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4HCB有机单晶探测器在低通量X射线照射下的光电导增益

在4-羟基氰基苯（4HCB，C 7 H 5 NO）本体有机半导体检测器中观察到光导增益（高达400％），从而获得了38.8μC Gy空气-1 s -1 cm -2的高灵敏度在50 kVp X射线束照射下。揭示了作为施加的偏置电压和入射X射线剂量率的函数的增益变化趋势。在X射线辐照的低通量范围内，观察到了增益与剂量率曲线的上升阶段，这归因于陷阱填充过程。提出了一种深陷相关模型，该模型中由陷获电子辅助的空穴注入负责增益。