Gallium nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless, GaN HEMTs exhibit a more pronounced dynamic ON-state resistance $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ than silicon transistors. The variation of $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ is caused by both the static $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ due to junction temperature rise and the dynamic $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ due to the electron trapping. Without a careful decoupling analysis, it is difficult to calculate and model the dynamic $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ portion. This article introduces a comprehensive approach of dynamic $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ evaluation comprising four techniques: 1) a clamping circuit for both the hard-switching (HS) device and synchronous rectification (SR) device; 2) a junction temperature monitoring technique; 3) control of both the pulse test and soak time; and 4) continuous operation of device under test. Based on the dynamic $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ test results, a new model of the $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ variation is developed where two coefficients $k_{T{j}}$ and $k_{\mathrm {dR}}$ are defined to model the contribution of the heating effect and the impact of the trapping effect, respectively. The $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ model is validated by the comparison between the calculated and measured junction temperatures of a 650-V/30-A GaN-based half-bridge. Furthermore, a detailed loss breakdown analysis is conducted for the GaN-based HS half-bridge. The results show that the switching losses, $E_{\mathrm{\scriptscriptstyle ON}}$ and $E_{\mathrm{\scriptscriptstyle OFF}}$ , are the dominant loss factors with high switching frequency. At last, the possible efficiency improvements are also discussed in detail.

中文翻译：

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考虑动态导通电阻的基于 GaN 的硬开关半桥的功率损耗表征和建模

氮化镓增强型高电子迁移率晶体管 (GaN E-HEMT) 与传统 Si 晶体管相比，由于其出色的开关性能，可以实现高频和高效率。然而，GaN HEMT 表现出更明显的动态导通电阻 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 比硅晶体管。的变化 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 是由静电引起的 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 由于结温上升和动态 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 由于电子俘获。没有仔细的解耦分析，很难计算和建模动态 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 部分。本文介绍了动态的综合方法 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 评估包括四种技术：1) 用于硬开关 (HS) 器件和同步整流 (SR) 器件的钳位电路；2) 结温监测技术；3) 控制脉冲测试和浸泡时间；4) 被测设备的连续运行。基于动态 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 测试结果，新模型 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 在两个系数的情况下开发了变异 $k_{T{j}}$ 和 $k_{\mathrm {dR}}$ 被定义为分别模拟加热效应的贡献和捕获效应的影响。这 $R_{\mathrm {DS}(\mathrm{\scriptscriptstyle ON})}$ 通过比较基于 650-V/30-A GaN 的半桥的计算结温和测量结温来验证模型。此外，还对基于 GaN 的 HS 半桥进行了详细的损耗击穿分析。结果表明，开关损耗， $E_{\mathrm{\scriptscriptstyle ON}}$ 和 $E_{\mathrm{\scriptscriptstyle OFF}}$ , 是具有高开关频率的主要损耗因素。最后，还详细讨论了可能的效率改进。