Flexibly manipulating optical and electrical properties of 2D materials is of great importance to extend their functional applications in the advanced optoelectronic field. Herein, a type II 2D/0D hybrid heterostructure is facilely fabricated by spin-coating CdSe quantum dots (CdSe-QDs) onto monolayer WS₂ (1L-WS₂) flakes, and improved fluorescence emission and electron density of 1L-WS₂ have been achieved through effective CdSe-QDs doping. The interfacial charge behavior is explored via X-ray photoelectron spectroscopy, scanning Kelvin probe force microscopy studies, and time-resolved photoluminescence measurements, proving the charge transfer from QDs to 1L-WS₂ in these heterostructures. Furthermore, the photocurrent of a photodetector based on this hybrid heterostructure increases significantly due to efficient and fast separation and collection of photocarriers, verifying the validity of our proposed carrier dynamic model. The current work proposes a convenient strategy for tuning the photonic and electronic properties of 2D semiconducting materials, which may pave the way for developing new-type optoelectronic devices based on these newly emerging 2D materials and heterostructures.

中文翻译：

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通过CdSe量子点掺杂来操纵单层WS ₂中光载流子的转移和分离

灵活地控制2D材料的光学和电学特性对于扩展其在高级光电领域的功能应用至关重要。在此，通过将CdSe量子点（CdSe-QDs）旋涂到单层WS ₂（1L-WS ₂）薄片上，可以轻松地制造II型2D / 0D杂化结构，并且1L-WS ₂具有更好的荧光发射和电子密度。通过有效的CdSe-QDs掺杂实现。通过X射线光电子能谱，扫描开尔文探针力显微镜研究和时间分辨的光致发光测量来研究界面电荷行为，证明电荷从量子点转移到1L-WS ₂在这些异质结构中。此外，基于这种混合异质结构的光电探测器的光电流由于有效，快速地分离和收集光载流子而显着增加，从而验证了我们提出的载流子动力学模型的有效性。当前的工作提出了一种方便的策略来调整2D半导体材料的光子和电子特性，这可能为基于这些新兴的2D材料和异质结构开发新型光电器件铺平道路。