Local strain-dependent spin-polarized electronic structure of a two-dimensional (2D) magnetic layer is an exciting property for practical applications. For example, it holds the promise for advanced ultrathin spintronic nanodevices with customized electronic and magnetic properties by local strain engineering. Here, we demonstrate that the spin-polarized electronic structure of a 2D manganese gallium nitride (MnGaN-2D) magnetic monolayer is sensitive to intrinsic local lattice strain, as proven by first-principles calculations and indicated by scanning tunneling spectroscopy measurements. Atomic resolution images reveal a highly non-Gaussian lattice spacing/strain distribution, while the spectroscopy reveals variations in the electronic density of states. Simulations of the MnGaN-2D monolayer based on first-principles calculations, including both isotropic and anisotropic strains, confirm a highly strain-dependent manganese partial density of states. Spin-orbit coupling is included which indicates either out-of-plane perpendicular magnetic anisotropy (PMA) or in-plane magnetic anisotropy, dependent on the type of strain whether compressive or tensile, suggesting that MnGaN-2D is magnetoelastic. The MnGaN-2D PMA is further supported by superconducting quantum interference device magnetometry measurements which reveal a high spin polarization of $\sim 79$% at room temperature.

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MnGaN 2D磁性单层的局部应变相关电子结构和垂直磁各向异性

二维（2D）磁性层的局部应变相关自旋极化电子结构是实际应用中令人兴奋的特性。例如，它有望通过局部应变工程技术实现具有定制的电子和磁性特性的先进超薄自旋电子纳米器件。在这里，我们证明了二维锰氮化镓（MnGaN-2D）磁性单层的自旋极化电子结构对固有的局部晶格应变敏感，这由第一原理计算证明并由扫描隧道光谱法测量表明。原子分辨率图像显示出高度非高斯晶格间距/应变分布，而光谱学显示出态电子密度的变化。基于第一性原理的MnGaN-2D单层模拟，包括各向同性和各向异性的应变，证实了高度依赖应变的锰部分态密度。自旋轨道耦合包括在内平面外垂直磁各向异性（PMA）或平面内磁各向异性，取决于应变类型（压缩还是拉伸），表明MnGaN-2D具有磁弹性。MnGaN-2D PMA进一步受到超导量子干涉仪磁力测量的支持，该测量显示出高自旋极化强度。$〜79$％ 在室温下。