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Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%
Solar RRL ( IF 7.9 ) Pub Date : 2020-07-08 , DOI: 10.1002/solr.202000210
David Lackner 1 , Oliver Höhn 1 , Ralph Müller 1 , Paul Beutel 1 , Patrick Schygulla 1 , Hubert Hauser 1 , Felix Predan 1 , Gerald Siefer 1 , Michael Schachtner 1 , Jonas Schön 1 , Jan Benick 1 , Martin Hermle 1 , Frank Dimroth 1
Affiliation  

The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.

中文翻译:

两端子直接晶圆键合GaInP / AlGaAs // Si三结太阳能电池,AM1.5g效率为34.1%

单结硅太阳能电池技术主导着陆地光伏市场。但是,基本效率限制为29.4%。这可以通过多结器件来克服。最近,GaInP / GaAs // Si晶圆键合三结双端子器件的效率为33.3%(AM1.5g)。本文中,分析了如何改进该器件以达到34.1%的转换效率。通过改善电流匹配,可以实现35%的效率(两个端子,AM1.5g)。
更新日期:2020-07-08
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