To favor the applications in electronic devices, topological semimetals require not only excellent topological electronic structures but also nice compatibility with the traditional Si‐based semiconductor. Herein, IrSi compound is revealed as a superior electronic material which satisfies both criteria proposed earlier. First, IrSi hosts novel band topology with multiple fermionic states. Without spin–orbit coupling (SOC), IrSi shows an accidental node loop, protected by two independent mechanisms. With SOC included, it shows two symmetry‐enforced nodal lines (NLs) and Dirac points (DPs). The presence of NLs and DPs under SOC has been verified by symmetry analysis. Remarkably, the DPs in IrSi locate quite near the Fermi level and possess type‐II band dispersions, which are rarely identified in Dirac semimetals. Second, IrSi has already been prepared on epitaxial Si wafers and thereby has been fabricated as IrSi/Si devices with excellent compatibility in previous experiments. This work further shows that the nodal loop and DPs are robust against potential lattice distortion during its epitaxial growth.

中文翻译：

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IrSi是一种具有新型拓扑特性且与半导体Si很好兼容的优质电子材料

为了支持电子设备中的应用，拓扑半金属不仅需要出色的拓扑电子结构，而且还需要与传统的基于Si的半导体良好的兼容性。在此，IrSi化合物被揭示为满足先前提出的两个标准的优良电子材料。首先，IrSi拥有具有多个铁离子态的新型能带拓扑。没有自旋轨道耦合（SOC），IrSi会显示意外的节点环路，并受到两种独立机制的保护。包括SOC，它显示了两个对称增强的节点线（NLs）和Dirac点（DPs）。通过对称分析已验证了SOC下NL和DP的存在。值得注意的是，IrSi中的DP位置非常靠近费米能级，并具有II型谱带色散，这在狄拉克半金属中很少发现。第二，IrSi已经在外延Si晶片上制备，因此在先前的实验中已被制成具有出色兼容性的IrSi / Si器件。这项工作进一步表明，节点环和DP在其外延生长期间对潜在的晶格畸变具有鲁棒性。