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B‐site‐doped BiFeO3‐based piezoceramics with enhanced ferro/piezoelectric properties and good temperature stability
Journal of the American Ceramic Society ( IF 3.9 ) Pub Date : 2020-06-22 , DOI: 10.1111/jace.17325
Yunjing Shi 1 , Fei Yan 1 , Xia He 1 , Kaiwei Huang 1 , Bo Shen 1 , Jiwei Zhai 1
Affiliation  

Here, B‐site doped 0.725BiFe0.98M0.02O3‐0.275BaTiO3 (M = Fe, Sc, Ga, and Al) + 0.8 mol% MnO2 (abbreviated as BF, BS, BG, and BA) (BFM‐BT) ceramics were designed and prepared to modulate octahedral distortions. According to bond‐valence calculations based on XRD Rietveld refinement data, B‐site doped BFM‐BT ceramics tended to have a higher distortion as the radius of the doping ion decreases, and obtained a great improvement of ferroelectric and piezoelectric performances. B‐site‐doped BFM‐BT ceramics significantly inhibited the formation of impurities, leading to better ferroelectric and piezoelectric performances. The BFM‐BT ceramics exhibited high Curie temperature of 519‐530℃ and good temperature stability for piezoelectric performances. The d33 values of BF, BS, and BA ceramics remained the room temperature value ranging from room temperature to 470℃. Meanwhile the content of impure phases, oxygen vacancies and valence of Fe3+ to Fe2+ decreased with the decreasing radii of B‐site doping ions.

中文翻译:

B位掺杂的BiFeO3基压电陶瓷,具有增强的铁/压电性能和良好的温度稳定性

在此,B位置掺杂的0.725BiFe 0.98 M 0.02 O 3 -0.275BaTiO 3(M = Fe,Sc,Ga和Al)+ 0.8 mol%MnO 2(BFM-BT)(BFM-BT)陶瓷(缩写为BF,BS,BG和BA)被设计并准备用来调制八面体变形。根据基于XRD Rietveld精修数据的键合价计算,随着掺杂离子半径的减小,掺B部位的BFM-BT陶瓷往往具有更高的畸变,并获得了铁电和压电性能的极大改善。掺B的BFM-BT陶瓷显着抑制了杂质的形成,从而改善了铁电和压电性能。BFM-BT陶瓷的居里温度为519-530℃,压电性能具有良好的温度稳定性。该d 33BF,BS和BA陶瓷的室温值保持在室温至470℃的范围内。同时,随着B位掺杂离子半径的减小,不纯相的含量,氧空位和Fe 3+到Fe 2+的价数降低。
更新日期:2020-06-22
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