The high-temperature oxidation resistance of Ti_1-xSi_xN films with Si content varying in wide range, 0.13 ≤ x ≤ 0.91, is evaluated. Films are grown in Ar/N₂ atmospheres using a hybrid high-power impulse and dc magnetron sputtering (HiPIMS/DCMS) configuration with Si target powered by HiPIMS and Ti target operated in DCMS mode. The substrate bias is synchronized to the Si⁺-rich portions of the HiPIMS pulses in order to promote solid solution formation. A combination of X-ray photoelectron spectroscopy, elastic recoil detection analysis, and cross-sectional scanning electron microscopy reveals a sharp increase in the oxidation resistance for layers with x > 0.50. The thickness of the oxide layer, following 1 h anneal at 800 °C in air, is in the range 150–200 nm for 0.13 ≤ x ≤ 0.50 and decreases to only 4 nm with x = 0.91, which is ~30 times lower than for the best performing Ti_1-xAl_xN film (x = 0.64) tested under the same conditions. The oxide forming on top of Ti_1-xSi_xN films with x ≥ 0.41 consists of a SiO₂-TiO₂ two-phase mixture with a molar ratio given by Si/Ti ratio. In Ti_1-xSi_xN layers with x ≤ 0.31, the presence of grain boundaries, which act as diffusion paths facilitates Si diffusion towards the bulk of the film resulting in that TiO₂, the thermodynamically more stable oxide, terminates the surface. Ti_0.09Si_0.91N films, are essentially unaffected by the anneal and exhibit a hardness of 23 GPa, which is ~30% higher than for the reference SiN_z film. Moreover, we demonstrate that 25 nm thick Ti_0.09Si_0.91N capping layers successfully prevent Ti_0.36Al_0.64N oxidation at 800 °C. Such approach provides superior oxidation protection compared to alloying TiAlN with Si. Our results suggest that multilayers including nm thin layers of high Si-content TiSiN is a most effective approach to improve high-temperature oxidation resistance of functional ceramic thin films.

钛的高温耐氧化性_{1- X}的Si _X N薄膜与Si含量变大范围内，0.13≤  X  ≤0.91，进行评价。使用混合高功率脉冲和直流磁控溅射（HiPIMS / DCMS）配置，在Ar / N ₂气氛中生长薄膜，其中，由HiPIMS供电的Si靶和以DCMS模式操作的Ti靶。衬底偏压与HiPIMS脉冲的富Si ^+的部分同步，以促进固溶体的形成。X射线光电子能谱，弹性反冲检测分析和横截面扫描电子显微镜相结合，发现x层的抗氧化性急剧增加。 > 0.50。所述氧化物层的厚度，以下在空气中在800℃下1个小时的退火，是在0.13≤范围150-200纳米 X  ≤0.50，并降低至仅4纳米X  = 0.91，这是〜低于30倍 在相同条件下测试的性能最好的Ti _{1- x} Al _x N薄膜（x = 0.64）。氧化物形成对Ti的顶部_{1- X}的Si _X N薄膜与X  ≥0.41由一个的SiO ₂ -TiO ₂与被Si / Ti比给定的摩尔比的两相混合物。在Ti _{1- x} Si _x N层中x ≤0.31，作为扩散路径的晶界的存在促进了Si向薄膜主体的扩散，导致热力学上更稳定的氧化物TiO ₂终止了表面。Ti _0.09 Si _0.91 N膜基本上不受退火影响，并且显示23 GPa的硬度，比参考SiN _z膜高约30％。此外，我们证明了25 nm厚的Ti _0.09 Si _0.91 N覆盖层可以成功地防止Ti _0.36 Al _0.64N在800°C时发生氧化。与将TiAlN与Si合金化相比，这种方法提供了卓越的抗氧化保护。我们的结果表明，包括高Si含量的TiSiN纳米层的多层是提高功能陶瓷薄膜的高温抗氧化性的最有效方法。