Abstract Zinc sulphide (ZnS) is one of the most important semiconductor for the optoelectronic devices. It is generally used as a buffer layer in highly efficient Cu(In,Ga)Se2 solar cells due to its environmentally friendly characteristics. Here, we studied the effects of Na+/Sn2+ substituent using a solution based method for improving characteristics and functions of Zn1-xNaxS/Zn1-xSnxS (x = 0–15%) thin films for such applications. The formation of Zn2+-S2-, Zn2+-Sn2+-S2-, and Zn2+-Na+-S2- bonding as well as the existence of Zn2+/Zn, Sn2+/Sn, S2−/S, Na+/Na, ions/elements have been examined by the FT-IR and XPS/EDX analysis. The produced films have mixed cubic and hexagonal polycrystalline structure with highly preferred orientation along (111) plane of predominant cubic phase. Comparatively, XRD, SEM, and AFM analysis clearly showed that the crystalline quality of the Zn1-xSnxS thin films is higher than those of Zn1-xNaxS thin films. The surface morphology of both type films is dense and homogeneous. The surface roughness of Zn1-xSnxS films has higher value as compared to the Zn1-xNaxS thin films. The optical quality of Zn1-xSnxS films was better than those Zn1-xNaxS films confirmed by UV–Vis analysis. Amongst of all the synthesized materials, 1% Sn substituted ZnS film sample has the best film crystallization and optical quality. The observed results suggested that it has a promising potential for the optoelectronic and solar cell applications.

中文翻译：

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提高用于光电和太阳能电池应用的 Na 和 Sn 取代 ZnS 薄膜的晶体/光学质量和光致发光性能；比较研究

摘要 硫化锌（ZnS）是光电器件最重要的半导体之一。由于其环保特性，它通常用作高效 Cu(In,Ga)Se2 太阳能电池中的缓冲层。在这里，我们使用基于溶液的方法研究了 Na+/Sn2+ 取代基的影响，以改善此类应用中 Zn1-xNaxS/Zn1-xSnxS (x = 0–15%) 薄膜的特性和功能。Zn2+-S2-、Zn2+-Sn2+-S2-、Zn2+-Na+-S2-键的形成以及Zn2+/Zn、Sn2+/Sn、S2-/S、Na+/Na、离子/元素的存在通过 FT-IR 和 XPS/EDX 分析进行了检查。生产的薄膜具有混合立方和六方多晶结构，沿主要立方相的 (111) 平面具有高度择优取向。比较而言，XRD、SEM、和 AFM 分析清楚地表明，Zn1-xSnxS 薄膜的结晶质量高于 Zn1-xNaxS 薄膜的结晶质量。两种类型薄膜的表面形态都是致密且均匀的。与 Zn1-xNaxS 薄膜相比，Zn1-xSnxS 薄膜的表面粗糙度值更高。Zn1-xSnxS 薄膜的光学质量优于通过 UV-Vis 分析证实的那些 Zn1-xNaxS 薄膜。在所有合成材料中，1% Sn 取代的 ZnS 薄膜样品具有最好的薄膜结晶和光学质量。观察到的结果表明它在光电和太阳能电池应用中具有广阔的潜力。与 Zn1-xNaxS 薄膜相比，Zn1-xSnxS 薄膜的表面粗糙度值更高。Zn1-xSnxS 薄膜的光学质量优于通过 UV-Vis 分析证实的那些 Zn1-xNaxS 薄膜。在所有合成材料中，1% Sn 取代的 ZnS 薄膜样品具有最好的薄膜结晶和光学质量。观察到的结果表明它在光电和太阳能电池应用中具有广阔的潜力。与 Zn1-xNaxS 薄膜相比，Zn1-xSnxS 薄膜的表面粗糙度值更高。Zn1-xSnxS 薄膜的光学质量优于通过 UV-Vis 分析证实的那些 Zn1-xNaxS 薄膜。在所有合成材料中，1% Sn 取代的 ZnS 薄膜样品具有最好的薄膜结晶和光学质量。观察到的结果表明它在光电和太阳能电池应用中具有广阔的潜力。