Determining the radiation effects on the basic electrical parameters of the fabricated high-dielectric MFIS structures, they were exposed to the high-energy ⁶⁰Co γ-rays. For this purpose, the values of ideality factor (n), barrier height (Φ_B) and series resistance (R_s) were extracted from the forward bias I–V data before and after irradiation by using various methods such as standard thermionic emission (TE) theory, Cheung’s and Norde functions. Additionally, the energy-dependent profile of surface states N_ss was extracted by considering voltage dependence of n, Φ_B and R_s and compared each other. Experimental results show that the reverse saturation current (I_o), n and R_s values increase with increasing radiation dose, but Φ_B decreases. When the value of R_s is considered in the calculation of N_ss, they were found to be considerably decreased. The observed low discrepancies between N_ss after irradiation show that the use of a high-dielectric ferroelectric interlayer leads to an increase in the resistance of MS to radiation. It is more important to fabricate radiation-resisted electronic device, especially in the satellites due to hard radiation in space. As a result, N_ss, R_s and the existence of interlayer are more effectual on the I–V characteristics which must be considered in the electrical parameter calculation.

确定辐射对制造的高介电MFIS结构的基本电参数的影响，将它们暴露于高能⁶⁰ Coγ射线。为了这个目的，理想因子（的值Ñ），势垒高度（Φ_乙）和串联电阻（ř_小号）从正向偏置提取我- V数据之前和照射后，通过使用各种方法，例如标准的热离子发射（ TE）理论，张氏和Norde函数。另外，表面的能量依赖性简档规定Ñ _SS通过的考虑电压依赖性萃取Ñ，Φ_乙和R _s并相互比较。实验结果表明，反向饱和电流（我_ø），Ñ和- [R_小号值随辐射剂量增加，但Φ_乙减小。当在计算N _ss时考虑R _s的值时，发现它们大大降低了。观察到的N _ss之间的低差异辐照后的结果表明，使用高介电强度的铁电中间层会导致MS抗辐射的能力增加。尤其是在卫星中，由于太空中的强辐射，制造抗辐射的电子设备尤为重要。结果，N _ss，R _s和中间层的存在对I – V特性的影响更大，在电气参数计算中必须考虑这些特性。