The aim of this study is to reduce the oxide and interface-trap charges and also improve the stability at the oxide–semiconductor interface by growing a SiO₂ interface layer on a Si wafer then depositing Al₂O₃ thin film. Effective oxide charges density (N_ox), border trap charges density (N_bt), interface states density (N_it), diffusion potential (V_D), donor concentration (N_D), and barrier height \({(\varPhi }_{\mathrm{B}})\) were calculated using the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements at different annealing temperatures. The flat-band voltage (V_fb) changed with annealing temperature and the V_fb value for the 450 °C annealed sample was closest to the ideal V_fb. The sample also possessed a high dielectric constant. For these reasons, C–V and G/w–V values of this sample at different frequencies were obtained. Compared to previous studies, very low N_btvalues (~ 10⁹ eV⁻¹ cm⁻²), low N_it values (~ 10¹⁰ eV⁻¹ cm⁻²) and high \({\varPhi }_{\mathrm{B}}\) values for the annealed samples were obtained due to the SiO₂ interface layer.

这项研究的目的是通过在Si晶片上生长SiO ₂界面层，然后沉积Al ₂ O ₃薄膜，减少氧化物和界面陷阱电荷，并提高氧化物-半导体界面的稳定性。有效氧化物电荷密度（N _ox），边界陷阱电荷密度（N _bt），界面态密度（N _it），扩散势（V _D），施主浓度（N _D）和势垒高度\（{（\ varPhi} _ {\ mathrm {B}}）\）是使用电容-电压（C-V）和电导-电压（G/ ω–V）在不同退火温度下的测量值。平坦带电压（V _fb）随退火温度而变化，并且450°C退火样品的V _fb值最接近理想V _fb。该样品还具有高介电常数。由于这些原因，获得了该样品在不同频率下的CV和G / wV值。与以前的研究相比，N _bt值很低（〜10 ⁹  eV ^-1  cm ^-2），N _it值很低（〜10 ¹⁰  eV由于SiO ₂界面层，获得了退火样品的^-1  cm ^-2）和高\（{{varPhi} _ {\ mathrm {B}} \）值。