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A simple analytical model for the resonant tunneling diode based on the transmission peak and scattering effect
Journal of Computational Electronics ( IF 2.1 ) Pub Date : 2020-06-20 , DOI: 10.1007/s10825-020-01531-4
Sneh Lata Yadav , Hakim Najeeb-ud-din

A new analytical model for the current–voltage characteristic of a resonant tunneling diode (RTD) is presented herein, being derived from the basic integral of the Tsu–Esaki equation. The model is physics based and developed as a function of material parameters such as the effective mass, barrier heights, and Fermi levels as well as geometrical parameters such as the barrier height and well width. The material chosen for the double-barrier RTD structure is AlGaAs/GaAs. The dependence of the peak transmission on the applied voltage and the scattering effect in the active region, which are neglected in previous models, are also taken into account. The model is implemented and validated using numerical simulations, revealing that the resulting electrical characteristic is in good agreement with numerical simulations using the Green’s function formalism.

中文翻译:

基于传输峰值和散射效应的谐振隧道二极管的简单分析模型

本文从Tsu-Esaki方程的基本积分中得出了一种新的谐振隧穿二极管(RTD)的电流-电压特性的分析模型。该模型基于物理学,并根据材料参数(例如有效质量,势垒高度和费米能级)以及几何参数(例如势垒高度和井宽)而开发。为双势垒RTD结构选择的材料是AlGaAs / GaAs。还考虑了先前模型中忽略的峰值透射对施加电压的依赖性以及在有源区域中的散射效应。该模型是通过数值模拟实现和验证的,
更新日期:2020-06-20
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