当前位置: X-MOL 学术IEEE J. Photovolt. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Effect of Superimposed DC Power on the Properties of Intrinsic Hydrogenated Amorphous Silicon Passivation Layer Deposited by RF Facing Target Sputtering
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2020-07-01 , DOI: 10.1109/jphotov.2020.2989174
Yuta Shiratori , Kazuyoshi Nakada , Shinsuke Miyajima

Radio frequency facing target sputtering (RF-FTS) has a potential to deposit high-quality intrinsic hydrogenated amorphous silicon (i-a-Si:H) passivation layers for silicon heterojunction (SHJ) solar cells without using hazardous gases. We investigated the effect of superimposed dc power on the deposition of i-a-Si:H by RF-FTS to improve the deposition rate. The i-a-Si:H layer deposited by dc-superimposed RF-FTS showed higher passivation quality and higher deposition rate compared to the i-a-Si:H layer deposited by RF-FTS. A low surface recombination velocity of 7.7 cm/s and a deposition rate of 6.8 nm/min were achieved by adopting dc-superimposition. An SHJ solar cell fabricated using a flat substrate and passivated with the i-a-Si:H layer deposited by dc-superimposed RF-FTS showed a conversion efficiency of 16.9%.

中文翻译:

叠加直流电源对射频对靶溅射沉积的本征氢化非晶硅钝化层性能的影响

射频对靶溅射 (RF-FTS) 有可能在不使用有害气体的情况下为硅异质结 (SHJ) 太阳能电池沉积高质量的本征氢化非晶硅 (ia-Si:H) 钝化层。我们研究了叠加直流电源对通过 RF-FTS 沉积 ia-Si:H 的影响,以提高沉积速率。与通过 RF-FTS 沉积的 ia-Si:H 层相比,通过直流叠加 RF-FTS 沉积的 ia-Si:H 层显示出更高的钝化质量和更高的沉积速率。通过采用直流叠加实现了 7.7 cm/s 的低表面复合速度和 6.8 nm/min 的沉积速率。使用平坦基板制造并通过直流叠加 RF-FTS 沉积的 ia-Si:H 层钝化的 SHJ 太阳能电池显示出 16.9% 的转换效率。
更新日期:2020-07-01
down
wechat
bug