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Investigation of Potential-Induced Degradation in Bifacial n-PERL Modules
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2020-07-01 , DOI: 10.1109/jphotov.2020.2981841
Wei Luo , Ning Chen , Vinodh Shanmugam , Xia Yan , Shubham Duttagupta , Yan Wang , Armin G. Aberle , Yong Sheng Khoo

A potential-induced degradation (PID) test method for bifacial double-glass silicon modules is first recommended for studying PID effects at the particular side of interest (the front or rear). This could be achieved by maintaining the same electric potential between solar cells and the untargeted module surface. Using the recommended test method, PID effects on the rear of n-type bifacial passivated emitter rear locally-diffused (bifacial n-PERL) devices (n-base passivated with silicon nitride) are studied. The rear of the n-PERL modules exhibits excellent stability under negative-bias conditions (relative to the ground). However, a huge power loss is observed when they are stressed with + 1000 V, likely due to PID-polarization occurring at the rear. The PID damage is recoverable by illuminating the rear module surface with artificial light. Most of the power loss can even be regenerated by several flashes on the module rear side from a solar simulator.

中文翻译:

双面 n-PERL 模块中电位引起的退化的研究

首先推荐使用双面双玻璃硅组件的电位诱导退化 (PID) 测试方法来研究特定感兴趣侧(正面或背面)的 PI​​D 效应。这可以通过在太阳能电池和非目标模块表面之间保持相同的电势来实现。使用推荐的测试方法,研究了 PID 对 n 型双面钝化发射极后部局部扩散(双面 n-PERL)器件(n 基极用氮化硅钝化)的影响。n-PERL 模块的背面在负偏置条件下(相对于地面)表现出出色的稳定性。然而,当它们承受 + 1000 V 的压力时,会观察到巨大的功率损失,这可能是由于 PID 极化发生在后面。PID 损坏可以通过用人造光照亮后模块表面来恢复。
更新日期:2020-07-01
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