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Enhancement of Stability by Applying HAT-CN for Hole Modification With Good Water Resistance and Hole Extraction
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2020-07-01 , DOI: 10.1109/jphotov.2020.2987390
Jing Chen , Kai-Li Wang , Xing-Juan Ma , Chong Dong , Yue Zhang , Xiao-Mei Li , Zhao-Kui Wang

A creative application of using HAT-CN as a hole modification layer (HML) in positive perovskite solar cells (PSCs) is demonstrated herein. This measure successfully improves the performance of devices in many aspects. Although HAT-CN owns a similar position of Fermi level with MoO3, there have been proved to be a much smoother interface. The devices using HAT-CN had a higher Voc at 1.10 V over 1.06 V that was shown by devices using MoO3. Optimized devices remained PCE over 18% for 188 h resulting from compressing recombination better for owning higher hydrophobicity. The measure that using HAT-CN for modification proposed in this work was proved that HAT-CN provides a better ability of extracting holes and owns better water-resistance to be more stable.

中文翻译:

通过应用 HAT-CN 进行孔改性以提高稳定性,具有良好的耐水性和孔提取

本文展示了在正钙钛矿太阳能电池 (PSC) 中使用 HAT-CN 作为空穴修饰层 (HML) 的创造性应用。该措施在许多方面成功地提高了设备​​的性能。尽管 HAT-CN 与 MoO3 具有类似的费米能级位置,但已证明其界面要平滑得多。使用 HAT-CN 的器件在 1.10 V 的 Voc 高于使用 MoO3 的器件显示的 1.06 V。优化的器件在 188 小时内保持 PCE 超过 18%,这是由于更好地压缩重组以获得更高的疏水性。本工作提出的使用HAT-CN进行改性的措施证明HAT-CN提供了更好的提取孔的能力并且具有更好的防水性以更稳定。
更新日期:2020-07-01
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