Abstract Organic-inorganic hybrid perovskite semiconductors as gain materials have been widely investigated in various lasing structures. Here, we construct a vertical cavity surface-emitting deep-blue laser device in one step. A high-quality CH3NH3PbCl3 single-crystalline film as gain material is in situ grown in solution confined between a pair of distributed Bragg reflectors, which naturally form an optical microcavity. The thickness of the perovskite film can be easily adjusted from submicron to several microns by changing the applied pressure on the substrates. At room temperature, the resulting device can lase in a range of 414–435 nm when pumped by an 8 ns pulsed semiconductor laser diode, exhibiting a typical threshold of 211 μJ/cm2. The lasing wavelength and the number of modes are tunable due to the adjustable thickness of the perovskite film.

中文翻译：

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室温下来自单晶钙钛矿薄膜的深蓝色 DBR 激光

摘要 有机-无机杂化钙钛矿半导体作为增益材料已在各种激光结构中得到广泛研究。在这里，我们一步构建了一种垂直腔面发射深蓝色激光器件。作为增益材料的高质量 CH3NH3PbCl3 单晶薄膜在限制在一对分布式布拉格反射器之间的溶液中原位生长，这自然形成了一个光学微腔。通过改变施加在基板上的压力，可以很容易地将钙钛矿薄膜的厚度从亚微米调整到几微米。在室温下，当由 8 ns 脉冲半导体激光二极管泵浦时，所得器件可以在 414-435 nm 范围内发射激光，典型阈值为 211 μJ/cm2。