Hole-doping of GaX, InX (X = S or Se) and SnO monolayers is predicted to induce a stable ferromagnetic order in these two-dimensional materials, making them potentially interesting for nanoscaled spintronic devices. Ferromagnetism in these materials arises from their peculiar Mexican-hat valence band edge structure, which leads to a Stoner instability. We discuss here the results from first-principles simulations on the p-type doping-induced ferromagnetism in these 2D materials. Hole-doping, induced by intrinsic and extrinsic point defects, is considered. Metal vacancies are found to produce shallow spin-polarized gap states near the valence band edge, leading to a p-type behavior. Among the investigated potential extrinsic defects (dopants), As substitution of the oxygen atoms in SnO or Bi substitution of the selenium atoms in InSe appears to be good candidates for the hole-doping of these 2D materials.

Ga X的空穴掺杂，In X（X （S或Se）和SnO单层预计会在这些二维材料中诱导出稳定的铁磁有序，这使它们对于纳米级自旋电子器件具有潜在的吸引力。这些材料中的铁磁性来自其特有的墨西哥帽价带边缘结构，从而导致斯托纳不稳定。我们在这里讨论这些2D材料中p型掺杂引起的铁磁性的第一性原理模拟的结果。考虑由固有和非固有点缺陷引起的空穴掺杂。发现金属空位在价带边缘附近产生浅的自旋极化的间隙状态，从而导致p型行为。在调查的潜在外在缺陷（掺杂剂）中，