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Stability improvement of solution-processed IGZO TFTs by fluorine diffusion from a CYTOP passivation layer
Journal of Physics D: Applied Physics ( IF 3.4 ) Pub Date : 2020-06-17 , DOI: 10.1088/1361-6463/ab8e7d
Kyung-Mo Jung 1 , Jongsu Oh 1 , Hyo Eun Kim 1 , Ariadna Schuck 1 , KyungRae Kim 1 , KeeChan Park 2 , Jae-Hong Jeon 3 , Soo-Yeon Lee 4 , Yong-Sang Kim 1
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This study investigated the effects of fluorine (F) diffusion from a CYTOP passivation layer into amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The F contained in the CYTOP passivation layer was diffused into a-IGZO through 350 °C annealing. The similar ionic radii of F and oxygen (O) allowed the passivation of oxygen vacancy (V o ) and weakly bonded oxygen by F. As a result, the a-IGZO TFTs with CYTOP passivation were highly stable under various stresses. The threshold voltage (V th ) shifts of a-IGZO TFTs without CYTOP passivation and with CYTOP passivation under a negative bias stress test for 10 000 s were −6.7 V and −2.5 V, respectively. In addition, the V th shifts of each device under a negative bias illumination stress test for 4000 s were −10.9 V and −5.3 V, respectively. This improvement was caused by a reduction of V o and a widened band gap of a-IGZO through the F diffusion effect. In addition, the CY...

中文翻译:

通过从CYTOP钝化层扩散氟来提高固溶处理的IGZO TFT的稳定性

这项研究调查了氟(F)从CYTOP钝化层扩散到非晶铟镓锌氧化(a-IGZO)薄膜晶体管(TFT)中的影响。CYTOP钝化层中包含的F通过350°C退火扩散到a-IGZO中。F和氧(O)的相似离子半径允许氧空位(V o)的钝化和F弱结合的氧。结果,具有CYTOP钝化的a-IGZO TFT在各种应力​​下都非常稳定。没有CYTOP钝化和CYTOP钝化的a-IGZO TFT在负偏压测试下持续10000 s的阈值电压(V th)偏移分别为-6.7 V和-2.5V。另外,在负偏压照明应力测试下持续4000 s时,每个器件的Vth漂移分别为-10.9 V和-5.3V。这种改善是由于F扩散效应降低了V o并扩大了a-IGZO的带隙。另外,CY ...
更新日期:2020-06-18
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