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Nanoscale structural characterization of manganite thin films integrated to silicon correlated with their magnetic and electric properties
Thin Solid Films ( IF 2.1 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.tsf.2020.138189
Aneely Carrero , Augusto Roman , Myriam Aguirre , Laura B. Steren

Abstract A detailed nanoscale structural characterization was performed on high-quality La0.66Sr0.33MnO3 (LSMO) thin films of different thicknesses and deposited by pulsed laser deposition onto buffered Si (100) substrates. A multilayered structure built of Y0.13Zr0.87O2 (YSZ) and CeO2 layers was used as buffer in order to optimize the manganite films growth. The stacking of the different layers, their morpholohy, composition and strains were analysed using different experimental techniques. In-situ characterization of the films, performed with reflection high-energy electron diffraction, revealed their epitaxial growth and smooth surfaces. High-resolution transmission electron microscopy (HR-TEM) images showed sharp interfaces between the constituents lattices and combined with energy-dispersive X-ray analysis allowed us to determine that there was no ion interdifussion across them. The Fourier-Fast-Transform of the HR-TEM images was used to resolve the epitaxy relationship between the layers, resulting in [100] LSMO (001) ‖ [110] CeO2 (001) ‖ [110] YSZ (001) ‖ [110] Si (001). The LSMO thin films were found to be ferromagnetic and metallic at low temperature regardless their thickness. The effect of strains and defects was only detected in films thinner than 15 nm and put in evidence by X-ray diffraction patterns and correlated with magnetic and electrical parameters.

中文翻译:

集成到硅上的锰酸盐薄膜的纳米级结构表征与其磁和电性能相关

摘要 在不同厚度的高质量 La0.66Sr0.33MnO3 (LSMO) 薄膜上进行了详细的纳米级结构表征,并通过脉冲激光沉积在缓冲硅 (100) 衬底上沉积。使用由 Y0.13Zr0.87O2 (YSZ) 和 CeO2 层构成的多层结构作为缓冲层,以优化锰矿薄膜的生长。使用不同的实验技术分析了不同层的堆叠、它们的形态、组成和应变。通过反射高能电子衍射对薄膜进行原位表征,揭示了它们的外延生长和光滑表面。高分辨率透射电子显微镜 (HR-TEM) 图像显示成分晶格之间的界面清晰,结合能量色散 X 射线分析,我们可以确定它们之间没有离子相互扩散。HR-TEM 图像的傅立叶快速变换用于解析层之间的外延关系,导致 [100] LSMO (001) ‖ [110] CeO2 (001) ‖ [110] YSZ (001) ‖ [ 110]硅(001)。发现 LSMO 薄膜在低温下具有铁磁性和金属性,无论其厚度如何。应变和缺陷的影响仅在厚度小于 15 nm 的薄膜中检测到,并通过 X 射线衍射图证明并与磁和电参数相关。HR-TEM 图像的傅立叶快速变换用于解析层之间的外延关系,导致 [100] LSMO (001) ‖ [110] CeO2 (001) ‖ [110] YSZ (001) ‖ [ 110]硅(001)。发现 LSMO 薄膜在低温下具有铁磁性和金属性,无论其厚度如何。应变和缺陷的影响仅在厚度小于 15 nm 的薄膜中检测到,并通过 X 射线衍射图证明并与磁和电参数相关。HR-TEM 图像的傅立叶快速变换用于解析层之间的外延关系,导致 [100] LSMO (001) ‖ [110] CeO2 (001) ‖ [110] YSZ (001) ‖ [ 110]硅(001)。发现 LSMO 薄膜在低温下具有铁磁性和金属性,无论其厚度如何。应变和缺陷的影响仅在厚度小于 15 nm 的薄膜中检测到,并通过 X 射线衍射图证明并与磁和电参数相关。
更新日期:2020-09-01
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