Achieving tunable emission in semiconductors over a wide-spectral range has always remained a challenge for its potential applications. For this purpose, transition metals (TMs) have been widely doped into II-VI semiconductors, however, least efforts have been made on adding non-metals. Here, we co-doped non-metal and TM, i.e. iodine + nickel (I + Ni) into CdS 1D nanostructures and explored optical properties for the first time. FESEM shows that among CdS: (F + Ni, Cl + Ni, Br + Ni, I + Ni), I + Ni-doped CdS nanobelts (NBs) were thinner and have high crystallinity confirmed by XRD and Raman spectroscopy. Successful incorporation of iodine into CdS NBs was confirmed by EDX. Low temperature (80 K) photoluminescence (PL) of I + Ni doped CdS shows multiple emission centred at 525, 583, 758, and 916 nm, respectively. The first emission corresponds to exciton magnetic polaron (EMP) and the next two emissions correspond to d-d transition (³A_2g → ¹E_g) and (³T_1P → ³T_1F) of Ni ions, respectively. The last emission (916 nm) originated only in the I + Ni co-doped CdS NB which may correspond to the iodine incorporated into belts. According to the best knowledge, iodine related emission was detected for the first time. This work will promote their future applications in solar cells and optoelectronic devices.

在半导体的宽光谱范围内实现可调发射一直是其潜在应用的挑战。为此目的，过渡金属（TM）已被广泛地掺杂到II-VI半导体中，但是，在添加非金属方面所做的工作最少。在这里，我们共掺杂了非金属和TM，即将碘+镍（I + Ni）转变为CdS 1D纳米结构，并首次探索了光学性质。FESEM显示，在CdS中：（F + Ni，Cl + Ni，Br + Ni，I + Ni），I +掺杂Ni的CdS纳米带（NBs）较薄并且具有高结晶度，这是通过XRD和拉曼光谱法证实的。EDX证实碘已成功掺入CdS NB中。I + Ni掺杂的CdS的低温（80 K）光致发光（PL）显示出分别以525、583、758和916 nm为中心的多重发射。第一个发射对应于激子磁极化子（EMP），接下来的两个发射对应于dd跃迁（³ A _2g → ¹ E _g）和（³ T _1P → ³ T _1F分别为）。最后的发射（916 nm）仅起源于I + Ni共掺杂的CdS NB，其可能对应于结合在带中的碘。根据最佳知识，首次检测到与碘有关的排放。这项工作将促进它们在太阳能电池和光电设备中的未来应用。